RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：181.89 Kbytes Page：14 Pages

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

Features • Common source configuration • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V • New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

35W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：181.89 Kbytes Page：14 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR） 描述：FET RF 40V 500MHZ PWRSO10 分立半导体产品 晶体管 - FET，MOSFET - 射频

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 40V 500MHZ PWRSO-10 分立半导体产品 晶体管 - FET，MOSFET - 射频