RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent g

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 40V 500MHZ PWRSO-10 分立半导体产品 晶体管 - FET，MOSFET - 射频

TINY CONTROLLER-BASED SPEECH SYNTHESIZER WITH PWM OUTPUT

GENERAL DESCRIPTION EM55000S series is a series of 3 to 15 seconds single chip high quality voice synthesizer IC. It is based on a tiny controller and is very suitable for low cost high quality toy market application.

10 W, C-band, Unmatched, GaN HEMT

文件：1.69498 Mbytes Page：11 Pages

15 W, 5500-5800 MHz, GaN HEMT for WiMAX

文件：1.22603 Mbytes Page：13 Pages

15 W, 5500-5800 MHz, GaN HEMT for WiMAX

文件：1.22603 Mbytes Page：13 Pages

10 W, C-band, Unmatched, GaN HEMT

文件：1.69498 Mbytes Page：11 Pages