PD55015价格

参考价格:¥89.9475

型号:PD55015-E 品牌:STMicroelectronics 备注:这里有PD55015多少钱,2025年最近7天走势,今日出价,今日竞价,PD55015批发/采购报价,PD55015行情走势销售排行榜,PD55015报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PD55015

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

ETCList of Unclassifed Manufacturers

未分类制造商

PD55015

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD55015 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent ga

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent g

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD55015 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent ga

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD55015 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55015 boasts the excellent ga

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent g

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent g

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent g

STMICROELECTRONICS

意法半导体

15W 12.5V 500MHz LDMOS,PowerSO-10RF塑料封装

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10 裸露底部焊盘 包装:托盘 描述:FET RF 40V 500MHZ PWRSO-10 分立半导体产品 晶体管 - FET,MOSFET - 射频

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10 裸露底部焊盘 包装:托盘 描述:FET RF 40V 500MHZ PWRSO-10 分立半导体产品 晶体管 - FET,MOSFET - 射频

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件:540.83 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件:540.83 Kbytes Page:23 Pages

STMICROELECTRONICS

意法半导体

TINY CONTROLLER-BASED SPEECH SYNTHESIZER WITH PWM OUTPUT

GENERAL DESCRIPTION EM55000S series is a series of 3 to 15 seconds single chip high quality voice synthesizer IC. It is based on a tiny controller and is very suitable for low cost high quality toy market application.

EMC

义隆电子

15 W, 5500-5800 MHz, GaN HEMT for WiMAX

文件:1.22603 Mbytes Page:13 Pages

Cree

科锐

10 W, C-band, Unmatched, GaN HEMT

文件:1.69498 Mbytes Page:11 Pages

Cree

科锐

10 W, C-band, Unmatched, GaN HEMT

文件:1.69498 Mbytes Page:11 Pages

Cree

科锐

15 W, 5500-5800 MHz, GaN HEMT for WiMAX

文件:1.22603 Mbytes Page:13 Pages

Cree

科锐

PD55015产品属性

  • 类型

    描述

  • 型号

    PD55015

  • 功能描述

    射频MOSFET电源晶体管 N-Ch 40 Volt 5 Amp

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-10-16 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST/意法
25+
PowerSO-10RF
32360
ST/意法全新特价PD55015-E即刻询购立享优惠#长期有货
ST/意法
24+
PowerSO-10RF-Formed-
860000
明嘉莱只做原装正品现货
STMICROELECTRONICS
23+
POWERSO-10RF
6850
只做原装正品假一赔十为客户做到零风险!!
ST
24+
so-10rf
211
现货供应
STMICROELECTRONICS
21+
NA
1820
只做原装,一定有货,不止网上数量,量多可订货!
ST
23+
NA
6800
原装正品,力挺实单
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
23+
PWRS-10
1200
全新原装现货,价格优势

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