HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

封装/外壳：PowerSO-10 裸露底部焊盘 包装：带 描述：FET RF 40V 500MHZ POWERFLAT 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：336.67 Kbytes Page：18 Pages

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz. PD55008L-E boasts the excellent

8W 12.5V 500MHz LDMOS in PowerFLAT plastic package

The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz.\nPD55008L-E boasts the excellent gain, linearit In compliance with 2002/95/EC european directive\nSupplied in tape and reel of 3K units\nExcellent thermal stability\nP\nOUT = 8W with 17dB gain @ 500MHz / 12.5V\nCommon source configuration\nNew leadless plastic package\nIntegrated ESD protection;

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes Page：25 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes Page：25 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

封装/外壳：8-PowerVDFN 包装：托盘 描述：TRANSISTOR RF 5X5 POWERFLAT 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：336.67 Kbytes Page：18 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes Page：25 Pages

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes Page：25 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：336.67 Kbytes Page：18 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes Page：25 Pages

MMIC Silicon Bipolar Broadband Amplifier

The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an ideal choice for DVB-S LNB cable receiver applications. ISL55005,