RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

8W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封装

The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.\n\n PD55008 boasts the excellent gain, linearity • Excellent thermal stability \n• POUT = 8 W with 17dB gain @ 500MHz / 12.5V \n• Common source configuration \n• New RF plastic package;

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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封装/外壳：PowerSO-10 裸露底部焊盘 包装：散装 描述：FET RF 40V 500MHZ PWRSO10 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes Page：25 Pages

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

MMIC Silicon Bipolar Broadband Amplifier

The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an ideal choice for DVB-S LNB cable receiver applications. ISL55005,