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PD20010价格
参考价格：￥75.5727
型号：PD20010-E 品牌：STMicroelectronics 备注：这里有PD20010多少钱，2025年最近7天走势，今日出价，今日竞价，PD20010批发/采购报价，PD20010行情走势销售排行榜，PD20010报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell | STMICROELECTRONICS 意法半导体 |   | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell | STMICROELECTRONICS 意法半导体 | | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell | STMICROELECTRONICS 意法半导体 | | ||
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell | STMICROELECTRONICS 意法半导体 | | ||
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条直引线） 包装：托盘 描述：TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条直引线） 包装：卷带（TR） 描述：TRANS N-CH 40V POWERSO-10RF STR 分立半导体产品 晶体管 - FET，MOSFET - 射频 | STMICROELECTRONICS 意法半导体 | | ||
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann | STMICROELECTRONICS 意法半导体 | | ||
Wiha Quality Tools 文件：129.46 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件：132.59 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
2.00mm PITCH CONNECTOR 文件：214.4 Kbytes Page：1 Pages | YEONHO | | ||
2.00mm PITCH CONNECTOR 文件：142.85 Kbytes Page：1 Pages | YEONHO | | ||
2.00mm PITCH CONNECTOR 文件：232.76 Kbytes Page：1 Pages | YEONHO | |
PD20010产品属性
- 类型
描述
- 型号
PD20010
- 功能描述
射频MOSFET电源晶体管 POWER R.F.
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIEC |
24+ |
module |
6000 |
全新原装正品现货 假一赔佰 |
|||
NIEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
NIEC |
23+ |
模块 |
320 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
NIEC |
NEW |
模块 |
3562 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
24+ |
SMD |
5500 |
一级代理原装现货假一罚十 |
||||
ST/意法 |
23+ |
N |
93771 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
ST |
2025+ |
PowerSO-10RF |
16000 |
原装优势绝对有货 |
|||
NIEC |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
PD20010芯片相关品牌
PD20010规格书下载地址
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DdatasheetPDF页码索引
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