1.3 關m WDM PIN PHOTODIODES

DESCRIPTION PD-3100 series InGaAsP Photodiode are suited to receive the light at the wavelength 1310 nm. With high reliability and high isolation between 1310 nm and 1550 nm (at least 30 dB), PD-3100 series are the best choice for 1310 nm / 1550 nm WDM telecom and datacom application. FEATURES

InGaAs PIN PHOTODIODES

DESCRIPTION PD-1100 series InGaAs Photodiode are suited to receive the light at the wavelength range from 1100 nm to 1600 nm. With high reliability, PD-1100 series are the best choice for telecom and datacom application. FEATURES ◇ High responsivity for dual windows at 1310 nm and 1550 nm ◇ Lo

1.55 關m WDM PIN PHOTODIODES

DESCRIPTION PD-5100 series Photodiode are suited to receive the light at the wavelength 1550 nm. With high reliability and high isolation between 1310 nm and 1550 nm (at least 30 dB), PD-5100 series are the best choice for 1550 nm / 1310 nm WDM telecom and datacom application. FEATURES ◇ High r

InGaAs PIN PHOTODIODES

文件：126.49 Kbytes Page：3 Pages

InGaAs PIN PHOTODIODES

DESCRIPTION PD-1100 series InGaAs Photodiode are suited to receive the light at the wavelength range from 1100 nm to 1600 nm. With high reliability, PD-1100 series are the best choice for telecom and datacom application. FEATURES ◇ High responsivity for dual windows at 1310 nm and 1550 nm ◇ Lo

InGaAs PIN PHOTODIODES

DESCRIPTION PD-1100 series InGaAs Photodiode are suited to receive the light at the wavelength range from 1100 nm to 1600 nm. With high reliability, PD-1100 series are the best choice for telecom and datacom application. FEATURES ◇ High responsivity for dual windows at 1310 nm and 1550 nm ◇ Lo

InGaAs PIN PHOTODIODES

文件：126.49 Kbytes Page：3 Pages

InGaAs PIN PHOTODIODES

文件：126.49 Kbytes Page：3 Pages

InGaAs PIN PHOTODIODES

文件：126.49 Kbytes Page：3 Pages

InGaAs PIN PHOTODIODES

文件：126.49 Kbytes Page：3 Pages

InGaAs PIN PHOTODIODES

文件：126.49 Kbytes Page：3 Pages

InGaAs PIN PHOTODIODES

文件：126.49 Kbytes Page：3 Pages

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N