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NPN Epitaxial Planar Silicon Transistor Features • VCEO=200V, IC=0.7A • High allowable power dissipation • Halogen free compliance • Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A

Bipolar Transistor

Features • VCEO=200V, IC=0.7A • High allowable power dissipation • Halogen free compliance • Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A

双极晶体管，低饱和压，NPN，0.7 A，200 V

Bipolar Transistor

Features • VCEO=200V, IC=0.7A • High allowable power dissipation • Halogen free compliance • Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 200V 0.7A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Operating Voltage= 250 / 480 VAC 3 PH Wye OperatingCurrentMax= 80, 100amp

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