Dual Voltage Output CMOS Delta-Sigma DIGITAL-TO-ANALOG CONVERTER With On-Chip Digital Filter

DESCRIPTION\nThe PCM1715 is a low cost, dual voltage output CMOS digital-to-analog converter. Incorporated into\nthe PCM1715 is a unique multi-level 4th-order delta-sigma architecture that eliminates influence from in\nput clock jitter and RF interferance resulting in truly superior performance.FEAT ●DUAL MULTI-LEVEL NOISE SHAPING\nDAC WITH ON-CHIP DIGITAL FILTER\n● HIGH PERFORMANCE:\n    THD+N: 0.0025% (–92dB) typ\n    Dynamic Range: 98dB typ\n    S/N RATIO: 110dB typ\n● ANALOG VOLTAGE OUTPUT: VO= 3.2Vp-p\n●ON-CHIP ANALOG LOW PASS FILTER\n● JITTER TOUGH AND LOW RADIO FREQUENCY INTERFERENCE;

Dual Voltage Output CMOS Delta-Sigma DIGITAL-TO-ANALOG CONVERTER With On-Chip Digital Filter

文件：77.92 Kbytes Page：9 Pages

Dual Voltage Output CMOS Delta-Sigma DIGITAL-TO-ANALOG CONVERTER With On-Chip Digital Filter

文件：77.92 Kbytes Page：9 Pages

EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) • High Speed Switching Time : tstg=1 μS(Typ.) • Complementary to KTC2814.

Integrated Circuit 8-Circuit Display Driver

Description: The NTE1715 is an integrated circuit in an 18–Lead DIP type package designed for high–breakown fluorescent display tube drive. Features: • Built–In 8 Circuits • Output Incorporating Pull–Down Resistor for Direct Fluorescent Display Tube Drive • Direct Input for CMOS o

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

Complementary Switch FET Drivers

文件：274.63 Kbytes Page：8 Pages