EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) • High Speed Switching Time : tstg=1 μS(Typ.) • Complementary to KTC2814.

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Low collector saturation voltage, high speed switching time, complementary to, KTC2814. Applications Power amplifier application, power switching application.

EPITAXIAL PLANAR PNP TRANSISTOR

文件：414.65 Kbytes Page：3 Pages

双极晶体管

Switching Transistor, TO-126, -50V, -2A

EPITAXIAL PLANAR PNP TRANSISTOR

文件：414.65 Kbytes Page：3 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：414.65 Kbytes Page：3 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：414.65 Kbytes Page：3 Pages

Integrated Circuit 8-Circuit Display Driver

Description: The NTE1715 is an integrated circuit in an 18–Lead DIP type package designed for high–breakown fluorescent display tube drive. Features: • Built–In 8 Circuits • Output Incorporating Pull–Down Resistor for Direct Fluorescent Display Tube Drive • Direct Input for CMOS o

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

Complementary Switch FET Drivers

文件：274.63 Kbytes Page：8 Pages