N-Channel Enhancement-Mode, Power Field-Effect Transistor Chip(80V, 35A, 0.055 Ohm)

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N Channel Enhancement Mode Power Field Effect Transister Chip

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Fast Switching

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POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

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Power MOS Field-Effect Transistors

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