DEVICE SPECIFICATION FOR PHOTOCOUPLER

PC900V0NSZX Series ■ Description PC900V0NSZX Series contains an IRED optically coupled to an OPIC chip. It is packaged in a 6 pin DIP, available in SMT gullwing lead-form and Wide SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.0kV. ■ Features 1. 6 pin DIP package

DEVICE SPECIFICATION FOR PHOTOCOUPLER

DIP 4pin AC Input Photocoupler

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DIP 4pin AC Input Photocoupler

文件：272.48 Kbytes Page：14 Pages

DIP 4pin AC Input Photocoupler

文件：272.48 Kbytes Page：14 Pages

AC Input Low Input Current Type Photocoupler

DIP 4pin AC Input Photocoupler

文件：272.48 Kbytes Page：14 Pages

DIP 4pin AC Input Photocoupler

DIP 4pin AC Input Photocoupler

文件：235.71 Kbytes Page：14 Pages

DIP 4pin AC Input Photocoupler

文件：272.48 Kbytes Page：14 Pages

DIP 4pin AC Input Photocoupler

文件：272.48 Kbytes Page：14 Pages

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)