European Safety Standard Approved Long Creepage Distance Type Photocoupler

■ Features 1. Conform to European Safety Stndards UL file No. E64380 Approved by VDE ( DIN VDE0884 : No. 77296 ) Approved by BSI ( BS EN60065 IEC65 Test Leaf lets land 5 BS EN60950 IEC950 EN41003 Test Leaflets land 5) Approved by SEMKO ( No. 9303001) Approved by DEM

封装/外壳：4-DIP 模块 包装：卷带（TR） 描述：OPTOISOLATOR 5KV TRANS MODULE 隔离器 光隔离器 - 晶体管，光电输出

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G − NOVEMBER 1985 − REVISED SEPTEMBER 1997

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

SMLS512G ??NOVEMBER 1985 ??REVISED SEPTEMBER 1997

文件：198.31 Kbytes Page：13 Pages

封装/外壳：4-DIP 模块 包装：散装 描述：OPTOISOLATOR 5KV TRANS MODULE 隔离器 光隔离器 - 晶体管，光电输出

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo