位置:首页 > IC中文资料 > PC28

PC28价格

参考价格:¥9.5344

型号:PC28 品牌:Mfg. 备注:这里有PC28多少钱,2026年最近7天走势,今日出价,今日竞价,PC28批发/采购报价,PC28行情走势销售排行榜,PC28报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

NUMONYX

Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-

NUMONYX

Numonyx짰 Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Introduction This document contains information pertaining to the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications. Unless otherwise indicated throughout the rest of this document, the Numonyx® Embedded Flash Memory (J3 65 nm) Sin

MICRON

美光

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

INTEL

英特尔

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

INTEL

英特尔

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

INTEL

英特尔

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

INTEL

英特尔

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

NUMONYX

Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-

NUMONYX

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

NUMONYX

Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block Performance — Initial Access Speed: 75ns — 25 ns 8-word Asynchronous page-mode reads — 256-Word write buffer for x16 mode, 256-

NUMONYX

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

INTEL

英特尔

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

INTEL

英特尔

BiCMOS INTEGRATED CIRCUIT

文件:183.92 Kbytes Page:10 Pages

RENESAS

瑞萨

功能:标准 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:LOW VOLTAGE DC MOTORS 电机,电磁阀,螺线管,驱动器板/模块 电机 - 交流, 直流 AC,DC

ETC

知名厂家

功能:标准 包装:托盘 描述:LOW VOLTAGE DC MOTORS 电机,电磁阀,螺线管,驱动器板/模块 电机 - 交流, 直流 AC,DC

ETC

知名厂家

POWER TRANSFORMER

文件:111.02 Kbytes Page:1 Pages

SUPERWORLD

POWER TRANSFORMER

文件:111 Kbytes Page:1 Pages

SUPERWORLD

POWER TRANSFORMER

文件:111.25 Kbytes Page:1 Pages

SUPERWORLD

POWER TRANSFORMER

文件:111.06 Kbytes Page:1 Pages

SUPERWORLD

POWER TRANSFORMER

文件:110.84 Kbytes Page:1 Pages

SUPERWORLD

IC FLASH 1G PARALLEL 64EASYBGA

MICRON

美光

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

MICRON

美光

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

文件:1.15488 Mbytes Page:118 Pages

MICRON

美光

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

文件:1.15488 Mbytes Page:118 Pages

MICRON

美光

IC FLASH 1G PARALLEL 64EASYBGA

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:855.4 Kbytes Page:75 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:855.4 Kbytes Page:75 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:855.4 Kbytes Page:75 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.22559 Mbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.25263 Mbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.22559 Mbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.25263 Mbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.22559 Mbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.25263 Mbytes Page:92 Pages

MICRON

美光

Numonyx짰 Axcell??P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit

文件:11.76523 Mbytes Page:86 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P33-65nm)

文件:987.83 Kbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P33-65nm)

文件:987.83 Kbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P33-65nm)

文件:987.83 Kbytes Page:92 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:855.4 Kbytes Page:75 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.25263 Mbytes Page:92 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.22559 Mbytes Page:92 Pages

MICRON

美光

Numonyx짰 Axcell??P30-65nm Flash Memory

文件:11.76523 Mbytes Page:86 Pages

MICRON

美光

Micron Parallel NOR Flash Embedded Memory (P33-65nm)

文件:987.83 Kbytes Page:92 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

Parallel NOR Flash Embedded Memory

文件:1.11876 Mbytes Page:87 Pages

MICRON

美光

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

文件:1.15488 Mbytes Page:118 Pages

MICRON

美光

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

文件:1.15488 Mbytes Page:118 Pages

MICRON

美光

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

PC28产品属性

  • 类型

    描述

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    1Gb (64M x 16)

  • 时钟频率:

    133MHz

  • 写周期时间 - 字,页:

    96ns

  • 访问时间:

    96ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    1.7V ~ 2V

  • 工作温度:

    -30°C ~ 85°C(TC)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    64-TBGA

  • 供应商器件封装:

    64-EasyBGA(8x10)

更新时间:2026-7-23 8:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/美光
2022+
BGA
486
只做进口原装正品现货,开13%增值税票!
MICRON
2023+
SMD
3881
原装现货热卖,安罗世纪电子只做原装
MICRON/美光
25+
FBGA
98900
原厂原装正品现货!!
MICRON/美光
25+
BGA64
3000
支持任何机构检测 只做原装正品
MICRON/美光
2425+
BGA
18800
只做原装正品,每一片都来自原厂
MICRON/美光
24+
BGA
486
原装优势现货
MICRON
24+
BGA64
9600
一级代理/全新现货/长期供应!!
MICRON
21+
BGA
2000
十年信誉,只做原装,有挂就有现货!
INTEL
23+
BGA
5000
原装正品公司现货
MICRON/美光
24+
BGA
49300
只做全新原装进口现货

PC28数据表相关新闻

  • PC1C101ME054A00CR0

    属性 参数值 商品目录 固态电解电容 脚间距(mm) 2.5 容值 100uF 精度 ±20%_ 额定电压 16V ESR串联电阻 24 mΩ @ 100kHz 工作寿命 2000Hrs @ 105℃ 额定纹波电流 2.4A @ 100kHz 外观尺寸(¢DxL,mm) 6.3x5.4 工作温度 -55℃ ~ +105℃

    2020-11-4
  • PC28F00AP33EFA 一级代理,原装现货

    一级代理原装现货PC28F00AP33EFA-「集成电路/IC

    2020-5-15
  • PC185

    PC185,全新原装当天发货或门市自取0755-82732291.

    2020-4-16
  • PC28F00BP30EFA

    PC28F00BP30EFA

    2020-4-16
  • PC28F128J3F75A

    PC28F128J3F75A

    2020-4-16
  • PC16550DV公司原装现货

    瀚佳科技(深圳)有限公司 专业进口电子元器件代理商

    2019-8-13