100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaplasticSOT223(SC-73)package. Features ■SOT223package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,leadingtolessheatgeneration. Applications ■Majorapplication

100V,1ANPNlowVCEsat(BISS)transistor

100V,1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

LowVCEsat(BISS)transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100V,1ANPNlowVCEsat(BISS)transistor

文件：154.73 Kbytes Page：14 Pages

RS232/422LowCap,#24-10pr,FPO,O/AFoilBraid,PVCJkt,CMG,100Ω

ProductDescription ComputerEIARS-232/422Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,twistedpairs,overallBeldfoil®(100coverage)+ tinnedcopperbraidshield(65coverage),24AWGstrandedtinnedcopperdrainwire,PVCjacket.

Vibratinglevelswitch

ThedeviceType8110isafillinglevelswitchforliquids,usingatuningforkasthe sensorelement. Itisdesignedforindustrialuseinallareasofprocesstechnologyandcanbeused inliquids.Typicalapplicationsareoverfloworrun-dryprotection. Thesmalltuningfork(40mminlengt

RS232/422LowCap,#24-10pr,FPO,O/AFoilBraid,LSZHJkt,Dca,100Ω

ProductDescription 10-Pair,24AWGstranded(7x32)TCconductors,Datalene®insulation,twistedpairs,overallBeldfoil®(100coverage)+TCbraidshield(65coverage),24 AWGstrandedTCdrainwire,LSZHjacket,FlameresistanceEC60332-3C

RingandSpadeTerminals

文件：187.51 Kbytes Page：1 Pages

LowCapacitanceforEIARS-232andEIARS-422Applications

文件：365.47 Kbytes Page：2 Pages