100 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat transistor in a plastic SOT223 (SC-73) package. Features ■ SOT223 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, leading to less heat generation. Applications ■ Major application

100 V, 1 A NPN low VCEsat (BISS) transistor

100 V, 1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Low VCEsat (BISS) transistors

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100 V, 1 A NPN low VCesat (BISS) transistor

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100 V, 1 A NPN low VCEsat (BISS) transistor

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RS232/422 Low Cap, #24-10pr, FPO, O/A FoilBraid, PVC Jkt, CMG, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

RS232/422 Low Cap, #24-10pr, FPO, O/A FoilBraid, LSZH Jkt, Dca, 100Ω

Product Description 10-Pair, 24 AWG stranded (7x32) TC conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + TC braid shield (65 coverage), 24 AWG stranded TC drain wire, LSZH jacket, Flame resistance EC 60332-3C

Ring and Spade Terminals

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Low Capacitance for EIA RS-232 and EIA RS-422 Applications

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