100V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS9110T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Qualifiedacc

RS232/422LowCap,#24-10pr,FPO,O/AFoilBraid,PVCJkt,CMG,100Ω

ProductDescription ComputerEIARS-232/422Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,twistedpairs,overallBeldfoil®(100coverage)+ tinnedcopperbraidshield(65coverage),24AWGstrandedtinnedcopperdrainwire,PVCjacket.

Vibratinglevelswitch

ThedeviceType8110isafillinglevelswitchforliquids,usingatuningforkasthe sensorelement. Itisdesignedforindustrialuseinallareasofprocesstechnologyandcanbeused inliquids.Typicalapplicationsareoverfloworrun-dryprotection. Thesmalltuningfork(40mminlengt

RS232/422LowCap,#24-10pr,FPO,O/AFoilBraid,LSZHJkt,Dca,100Ω

ProductDescription 10-Pair,24AWGstranded(7x32)TCconductors,Datalene®insulation,twistedpairs,overallBeldfoil®(100coverage)+TCbraidshield(65coverage),24 AWGstrandedTCdrainwire,LSZHjacket,FlameresistanceEC60332-3C

RingandSpadeTerminals

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LowCapacitanceforEIARS-232andEIARS-422Applications

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