12 V, 6 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4612PA. Features and benefits ■ Low collector-emitter saturatio

PBSS5612PA - 12 V, 6 A PNP low VCEsat (BISS) transistor

封装/外壳：3-PowerUDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 12V 6A 3HUSON 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

12 V, 6 A PNP low VCEsat (BISS) transistor

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2.7 V to 5.5 V, uA, 8-/10-/12-Bit nanoDACs with

GENERAL DESCRIPTION The AD5602/AD5612/AD5622, members of the nanoDAC® family, are single 8-, 10-, 12-bit buffered voltage-out digital-to-analog converters (DAC) that operate from a single 2.7 V to 5.5 V supply, consuming FEATURES Single 8-, 10-, 12-bit DACs, 2 LSB INL 6-lead LFCSP and S

2.7 V to 5.5 V, μA, 8-/10-/12-Bit nanoDACs with I2C Compatible Interface in LFCSP and SC70

FEATURES ► Single 8-, 10-, 12-bit DACs, 2 LSB INL ► 6-lead LFCSP and SC70 packages ► Micropower operation: 100 μA maximum at 5 V ► Power down to

Microwave Wideband Synthesizer with Integrated VCO

FEATURES ► RFOUT output frequency range: 7300MHz to 8500MHz ► PDIV_OUT and NDIV_OUT frequency range: 57MHz to 8500MHz ► Fractional-N synthesizer and Integer N synthesizer modes ► Typical PFD spurious:

Rectangular LED Assembly

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High Current Chokes

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