80 V, 4 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4480X. FEATURES • High hFE and low VCEsat at high current operation • High collector current IC: 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power periphera

80 V, 4 A PNP low VCEsat (BISS) transistor

FEATURES •High hFE and low VCEsat at high current operation •High collector current IC: 4 A •High efficiency leading to less heat generation. APPLICATIONS •Medium power peripheral drivers (e.g. fans and motors) •Strobe flash units for digital still cameras and mobile phones •Inverter appl

Low VCEsat (BISS) transistors

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80 V, 4 A PNP low VCEsat (BISS) transistor

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 4A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP low VCEsat (BISS) transistor 80 V, 4 A

文件：206.31 Kbytes Page：13 Pages

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP 80V 4A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Triple Diffused Horizntal Deflection Output

Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode

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