20 V, 4 A PNP low VCEsat (BISS) transistor

20 V, 4 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D. Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector curren

20 V, 4 A PNP low VCEsat (BISS) transistor

Features * Very low collector-emitter saturation resistance * Ultra low collector-emitter saturation voltage * 4 A continuous collector current * Up to 15 A peak current * High efficiency leading to less heat generation

20 V, 4 A PNP low VCEsat (BISS) transistor

20 V, 4 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D. Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector curren

20 V, 4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D-Q 2. Features and benefits • Very low collector-emitter saturation resistance • Ultra low collector-emitter saturation voltage • 4 A continuou

封装/外壳：SC-74，SOT-457 包装：卷带（TR） 描述：TRANS PNP 20V 4A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V, 4 A PNP low VCEsat (BISS) transistor

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20 V, 4 A PNP low VCEsat transistor

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