50 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

50 V, 2 A PNP low VCEsat (BISS) transistor

50 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high

50 V, 2 A PNP low VCEsat (BISS) transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：PBSS5250TH/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ELECTRIC FUEL PUMP

文件：131.83 Kbytes Page：4 Pages

Chip Lead Spacing

文件：25.74 Kbytes Page：1 Pages

Chip Lead Spacing

文件：25.74 Kbytes Page：1 Pages

BATTERY CONTACTS FOR MOLDED CASES

文件：142.89 Kbytes Page：2 Pages

ELECTRIC FUEL PUMP

文件：131.83 Kbytes Page：4 Pages