50 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector

50 V, 2 A PNP low VCEsat (BISS) transistor

50 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high

50 V, 2 A PNP low VCEsat (BISS) transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：PBSS5250TH/SOT23/TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Chip Lead Spacing

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ELECTRIC FUEL PUMP

文件：131.83 Kbytes Page：4 Pages

Chip Lead Spacing

文件：25.74 Kbytes Page：1 Pages

BATTERY CONTACTS FOR MOLDED CASES

文件：142.89 Kbytes Page：2 Pages

ELECTRIC FUEL PUMP

文件：131.83 Kbytes Page：4 Pages