40 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4240T. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged

40 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced h

Low VCEsat (BISS) transistors

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通用三极管

小信号三极管

40 V, 2 A PNP low VCEsat (BISS) transistor

40 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP low VCEsat (BISS) transistor 40 V, 2 A

文件：305.67 Kbytes Page：9 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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