40 V low VCEsat PNP transistor

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Self alignment during soldering due to straight

丝印代码：25；40 V low VCEsat PNP transistor

FEATURES •300 mW total power dissipation •Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package •Improved thermal behaviour due to flat leads •Self alignment during soldering due to straight leads •Low collector-emitter saturation voltage •High current capability APPLICATIONS •General

40 V low VCEsat PNP transistor

40 V low VCEsat PNP transistor

封装/外壳：SOT-563，SOT-666 包装：散装 描述：TRANS PNP 40V 1A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SOT-563，SOT-666 包装：卷带（TR） 描述：TRANS PNP 40V 1A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in an SC-74 (SOT457) plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD back-lighting •

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4140S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat gener

Brushless DC motor drive circuit

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Brushless DC motor drive circuit

文件：240.29 Kbytes Page：24 Pages

Brushless DC motor drive circuit

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