30 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alte

30 V; 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Small SMD plastic package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC

Low VCEsat (BISS) transistors

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30 V; 1 A PNP low VCEsat (BISS) transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V; 1 A PNP low VCEsat (BISS) transistor

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IEC Appliance Inlet C20 with Filter, ECO design, front or rear side Mounting

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IEC Appliance Inlet C20 with Filter, ECO design, front or rear side Mounting

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Connector Audio, Wall Mount, Male, 3 & 5 Conductor

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IEC Appliance Inlet C20 with Filter, ECO design, front or rear side Mounting

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IEC Appliance Inlet C20 with Filter, ECO design, front or rear side Mounting

文件：618.17 Kbytes Page：7 Pages