20 V, 1 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. NPN complement: PBSS4120T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

20 V, 1 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative for MOSFETs in specific applications. APPLICATIONS •Power manage

20 V; 1 A PNP low VCEsat (BISS) transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP low VCEsat (BISS) transistor 20 V, 1 A

文件：125.93 Kbytes Page：7 Pages

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

EU Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

US Power Supply Cord with IEC Connector C13, V-Lock, straight

文件：357.86 Kbytes Page：2 Pages

IEC Appliance Inlet C14 or C18 with Filter, ECO design, Front- or Rear Side Mounting

文件：881.16 Kbytes Page：6 Pages

IEC Interconnection Cord with IEC Connector C13, V-Lock, straight

文件：380.7 Kbytes Page：2 Pages