30 V, 6 A NPN low VCEsat (BISS) transistor

30 V, 6 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors * Exposed heat sink for excellent thermal and electrical conductivity * Leadless small S

30 V, 6 A NPN low V_CEsat (BISS) transistor

封装/外壳：3-PowerUDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 6A 3HUSON 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 6 A NPN low VCEsat (BISS) transistor

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High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

14.0 GHz to 14.5 GHz, SATCOM, Ku Band Upconverter

GENERAL DESCRIPTION The ADMV4630 is a Ku band upconverter optimized for various satellite communication (SATCOM) user terminals that operate in the 14.0 GHz to 14.5 GHz frequency range. The ADMV4630 local oscillator (LO) signal is generated internally via the on-chip Integer N (INT) synthesiz

14.0 GHz to 14.5 GHz, SATCOM, Ku Band Upconverter

GENERAL DESCRIPTION The ADMV4630 is a Ku band upconverter optimized for various satellite communication (SATCOM) user terminals that operate in the 14.0 GHz to 14.5 GHz frequency range. The ADMV4630 local oscillator (LO) signal is generated internally via the on-chip Integer N (INT) synthesiz

High Q, high self-resonant frequency

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Varnished Chokes

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