40 V, 5 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Mediu

40 V, 5 A NPN low VCEsat (BISS) transistor

40 V, 5 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. 2. Features and benefits • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat gener

功率三极管

NPN小信号三极管

40 V, 5 A NPN low VCEsat (BISS) transistor

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 40V 4A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor 40 V, 5 A

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