60 V, 3 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360Z. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabili

60 V, 3 A NPN low VCEsat (BISS) transistor

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封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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