2A NPN Low VCE(sat) (BISS) Transistor

FEATURES ● Low collector-emitter saturation voltage ● High current capability ● Improved device reliability due to reduced heat generation. APPLICATIONS ● Supply line switching circuits ● Battery management applications ● DC/DC converter applications ● Strobe flash units ● Heavy duty batt

通用三极管

NPN小信号三极管

40 V low VCEsat NPN/PNP transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High collector current gain hFE at high IC •High efficiency leading to reduced heat generation •Reduced printed-circuit board area requirements. APPLICATIONS •Power management: –Compl

40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • R

40 V low VCEsat NPN/PNP transistor

40 V; 2 A NPN low VCEsat (BISS) transistor

40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced h

40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High collector current gain (hFE) at high IC •High efficiency leading to reduced heat generation •Reduced printed-circuit board area requirements. APPLICATIONS •Power management: –DC-

40 V low VCEsat NPN transistor

40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capa

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packag

40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management

40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240Z Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabilit

Low VCEsat (BISS) transistors

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40 V low VCEsat NPN/PNP transistor

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Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

40 V; 2 A NPN low VCEsat (BISS) transistor

40 V; 2 A NPN low VCEsat (BISS) transistor

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 2A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 2 A NPN low VCEsat (BISS) transistor

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40 V low VCEsat NPN transistor

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40 V, 2 A NPN low VCEsat (BISS) transistor

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SPST UltraCMOS??CATV Switch DC - 1300 MHz

Product Description The PE4240 is a high-isolation MOSFET Switch designed for CATV applications, covering a broad frequency range from DC up to 1.3 GHz. This single-supply SPST switch offers a single-pin CMOS control interface with industry leading CTB performance. It also provides low insertion

Type ?쏯??Male Terminated Plug

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HEYConnect™ Terminal Bushings

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This application note provides an easy introduction to the usage

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40V N-Channel MOSFET

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