2A NPN Low VCE(sat) (BISS) Transistor

FEATURES ● Low collector-emitter saturation voltage ● High current capability ● Improved device reliability due to reduced heat generation. APPLICATIONS ● Supply line switching circuits ● Battery management applications ● DC/DC converter applications ● Strobe flash units ● Heavy duty batt

通用三极管

NPN小信号三极管

丝印代码：M3；40 V low VCEsat NPN/PNP transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High collector current gain hFE at high IC •High efficiency leading to reduced heat generation •Reduced printed-circuit board area requirements. APPLICATIONS •Power management: –Compl

40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • R

40 V low VCEsat NPN/PNP transistor

40 V; 2 A NPN low VCEsat (BISS) transistor

丝印代码：ZE；40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced h

40 V; 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transistors.\n• AEC-Q101 qualified;

NPN General Purpose Transistor

Features Supply line switching circuits « DC/DC converter applications. « Battery management applications

丝印代码：ZE；40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

丝印代码：42；40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High collector current gain (hFE) at high IC •High efficiency leading to reduced heat generation •Reduced printed-circuit board area requirements. APPLICATIONS •Power management: –DC-

40 V low VCEsat NPN transistor

丝印代码：S47；40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capa

NPN General Purpose Transistor

Features Supply line switching circuits « DC/DC converter applications. « Battery management applications

丝印代码：42；40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packag

丝印代码：S4240Z；40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240Z Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabilit

Low VCEsat (BISS) transistors

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40 V low VCEsat NPN/PNP transistor

文件：473.7 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

40 V; 2 A NPN low VCEsat (BISS) transistor

文件：270.34 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 2A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 2A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 2 A NPN low VCEsat (BISS) transistor

文件：190.85 Kbytes Page：12 Pages

40 V low VCEsat NPN transistor

文件：267.42 Kbytes Page：7 Pages

40 V, 2 A NPN low VCEsat (BISS) transistor

文件：217.15 Kbytes Page：14 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy