30 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

30 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES · Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High efficiency leading to less heat generation · Reduced printed-circuit board requirements · Cost effective alternative to MOSFETs in specific applications. APPLICATIONS · Power

小信号三极管

30 V; 1 A NPN low VCEsat (BISS) transistor

Low VCEsat (BISS) transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor

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