30 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

30 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES · Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High efficiency leading to less heat generation · Reduced printed-circuit board requirements · Cost effective alternative to MOSFETs in specific applications. APPLICATIONS · Power

30 V; 1 A NPN low VCEsat (BISS) transistor

小信号三极管

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor

文件：55.29 Kbytes Page：7 Pages

Set of Casters for A-Serie Cabinets

Product Description Casters for Free Standing A-Serie Cabinet. Set of 4 Casters.

60V N-Channel MOSFET

General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Pro

SAW Filter

文件：218.5 Kbytes Page：2 Pages

LED driver using the HVLED815PF

文件：3.38917 Mbytes Page：41 Pages

DDC 400 Series N plug to N jack, 3m

文件：251.16 Kbytes Page：3 Pages