30 V, 1 A NPN low VCEsat (BISS) transistor

30 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. 2. Features and benefits • Very low collector-

30 V, 1 A NPN low VCEsat (BISS) transistor

30 V, 1 A NPN low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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Product Description Casters for Free Standing A-Serie Cabinet. Set of 4 Casters.

60V N-Channel MOSFET

General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Pro

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