1. General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

and solderable side pads.

PNP complement: PBSS5130QA.

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• High energy efficiency due to less heat generation

• Reduced Printed-Circuit Board (PCB) area requirements

• Solderable side pads

• AEC-Q101 qualified

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)