20 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5120T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

20 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power managem

小信号三极管

20 V; 1 A NPN low VCEsat (BISS) transistor

20 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to less heat generation •Reduced printed-circuit board requirements •Cost effective alternative to MOSFETs in specific applications. APPLICATIONS •Power managem

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor

文件：267.6 Kbytes Page：7 Pages

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

Features • 0 to 100 adjustability. • Voltage programmable. • Voltage monitor. • Remote on/off control. • EMI/RFI shielding. • Short circuit, reverse polarity protection. • Arc protection.

Relampable Socket

文件：93.86 Kbytes Page：1 Pages

Adafruit CharliePlex LED Matrix Bonnet - 8x16 Green LEDs

文件：616.12 Kbytes Page：2 Pages

Small size, heavy contact load, capable of standing strong current of 45A at 14VDC.

文件：900.11 Kbytes Page：1 Pages

Both European 11mm pole distance and American 8mm pole distance available

文件：900.11 Kbytes Page：1 Pages