30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ Optimized switching time ■ High collector current capab

PBSS4032SP - 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

30 V NPN/PNP low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area t

30 V NPN/PNP low VCEsat (BISS) transistor

30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

文件：173.31 Kbytes Page：15 Pages

PBSS4032SPN - 30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor

30 V NPN/PNP low VCEsat (BISS) transistor

文件：533.49 Kbytes Page：20 Pages

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

Double Coated Urethane Foam Tapes

文件：109 Kbytes Page：5 Pages

Heyco-Flex™ VI Liquid Tight Conduit Fittings

文件：156.61 Kbytes Page：1 Pages

low-loss, compact, and economical surface-acoustic-wave (SAW)

文件：87.34 Kbytes Page：3 Pages

RF Filter

文件：157.08 Kbytes Page：3 Pages