丝印代码：4032SP；30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ Optimized switching time ■ High collector current capab

PBSS4032SP - 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor - PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. ·Low collector-emitter saturation voltage VCEsat\n·Optimized switching time\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistor;

PBSS4032SPN - 30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor

30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor - NPN /PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) Surface-Mounted Device (SMD) plastic package. ·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High energy efficiency due to less heat generation\n·Low collector-emitter saturation voltage VCEsat\n·Optimized switching time\n·Smaller required PCB area than for conventional transistors;

丝印代码：4032SPN；30 V NPN/PNP low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area t

30 V NPN/PNP low VCEsat (BISS) transistor

30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

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30 V NPN/PNP low VCEsat (BISS) transistor

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TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res