30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor

30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area t

PBSS4032SN - 30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor

30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor

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CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

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low-loss, compact, and economical surface-acoustic-wave (SAW)

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