General description

30 V, 4.2 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required

30 V, 4.2 A PNP low VCEsat (BISS) transistor

封装/外壳：TO-243AA 包装：散装 描述：TRANS PNP 30V 4.2A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 4.2 A PNP low VCEsat (BISS) transistor

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30 V, 4.2 A PNP low VCEsat transistor

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