30 V, 2.4 A PNP low VCEsat (BISS) transistor

丝印代码：BN；30 V, 2.4 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Bo

30 V, 2.4 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4032NT. • Low collector-emitter saturation voltage VCEsat\n• Optimized switching time\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) ar;

30 V, 2.4 A PNP low VCEsat (BISS) transistor

30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 ??18 December 2009

文件：181.22 Kbytes Page：14 Pages

丝印代码：BN；30 V, 2.4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NT-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capability IC and ICM

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 2.4A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 2.4 A PNP low VCEsat (BISS) transistor

文件：181.22 Kbytes Page：14 Pages

30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 ??18 December 2009

文件：181.22 Kbytes Page：14 Pages

30 V, 2.4 A PNP low VCEsat transistor

TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

TRIPLE SERIAL ADDERS

DESCRIPTION The HCC/4032B/4038B (extended temperature range) and HCF4032B/4038B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4032B and HCC/HCF4038B types consist of three se

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res