30 V, 2.7 A PNP low VCEsat (BISS) transistor

30 V, 2.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Bo

30 V, 2.7 A PNP low VCEsat (BISS) transistor

封装/外壳：SC-74，SOT-457 包装：散装 描述：TRANS PNP 30V 2.7A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 2.7 A PNP low VCEsat (BISS) transistor

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DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

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