30 V, 4.9 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Print

30 V, 4.9 A NPN low VCEsat (BISS) transistor

30 V, 4.9 A NPN low VCEsat (BISS) transistor

30 V, 4.9 A NPN low VCEsat (BISS) transistor

30 V, 4.9 A NPN low VCEsat transistor

1. General description NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capabi

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 4.9A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 4.9 A NPN low VCEsat transistor

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DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

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