30 V, 4.7 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ Optimized sw

30 V, 4.7 A NPN low VCEsat (BISS) transistor

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 30V 4.7A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 4.7 A NPN low VCEsat transistor

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

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