40 V, 500 mA PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector current gain (hFE)

40 V, 500 mA PNP low VCEsat (BISS) transistor

40 V, 500 mA PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

40 V, 500 mA PNP low VCEsat (BISS) transistor

封装/外壳：SC-75，SOT-416 包装：散装 描述：TRANS PNP 40V 0.5A SC75 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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