40 V, 500 mA PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector current gain (hFE)

40 V, 500 mA PNP low VCEsat (BISS) transistor

丝印代码：1T；40 V, 500 mA PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

40 V, 500 mA PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.\n NPN complement: PBSS2540E.

封装/外壳：SC-75，SOT-416 包装：散装 描述：TRANS PNP 40V 0.5A SC75 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Headphone amplifier with internal LPF and EVR for CD-ROM

The BH3540AFS is an H/P amplifier with internal secondary LPF and EVR circuits. When multibit output from a D/A converter is input, the secondary LPF outputs an audio signal. Output level for headphones can be changed with the EVR circuit. This IC also has independent internal mute circuits for th

4/5 Bit Multiplexed, 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches

General Description The FM3540/60 multiplexes the I-port input signals with two internal non-volatile registers that can be loaded through the serial port. The multiplexer is selected via the serial port and defaults to the I-Port upon power-up. Pull-up resistors are provided on the input port to

35 Amp Rectifier 20 to 100 Volts Schottky Barrier

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DECT receiver

文件：68 Kbytes Page：16 Pages

DECT receiver

文件：68 Kbytes Page：16 Pages