80 V, 5.1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

80 V, 5.1 A NPN low VCEsat (BISS) transistor

80 V, 5.1 A NPN low VCEsat (BISS) transistor

80 V, 5.1 A NPN low VCEsat (BISS) transistor

80 V, 5.1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 5.1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80 V, 5.1 A NPN low VCEsat transistor

Precision Vise Combinations

Model 201 Features: > The easy-to-use single knob controls head movement through 3-planes: 210° Tilt, 360° Turn & 360° Rotation > Fine/coarse adjusting knob controls jaw pressure for delicate work > Grooved jaws are excellent for holding small objects and are made of reinforced thermal compos

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