NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123YT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123YT-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PREBIAS NPN 0.7W TO92-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 250MW TO236AB 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

Customer SpecificationS

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

M.2 Socket, H2.1 A Key 0.5 Pitch G/F, Black, Reel

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

General Purpose Tweezers

文件：3.67611 Mbytes Page：4 Pages

3.6V/400mAh

文件：207.43 Kbytes Page：1 Pages