NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PREBIAS NPN 0.7W TO92-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 250MW TO236AB 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

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