40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ET-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

Easy Identification and Tracing with 10-color Cable

文件：782.9 Kbytes Page：2 Pages

1/4 ENCLOSED PHONE JACKS

文件：94.03 Kbytes Page：5 Pages

POWER DIVIDERS / COMBINERS

文件：100.79 Kbytes Page：1 Pages