40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

CustomerSpecification

Construction Diameters(In) 1)Component13X1COND a)Conductor16(65/34)AWGBareCopper0.059 b)Insulation 0.016Wall,Nom.PVC/0.005Wall NYLON 0.101 (1)Color(s) CondColorCondColorCondColor 1BLACK2WHITE3 GREEN/YELLOW 2)CableAssembly3ComponentsCabled a)Twists:

CustomerSpecification

Construction Diameters(In) 1)Component13X1COND a)Conductor16(65/34)AWGBareCopper0.059 b)Insulation 0.016Wall,Nom.PVC/0.005Wall NYLON 0.101 (1)Color(s) CondColorCondColorCondColor 1BLACK2WHITE3 GREEN/YELLOW 2)CableAssembly3ComponentsCabled a)Twists:

EasyIdentificationandTracingwith10-colorCable

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1/4ENCLOSEDPHONEJACKS

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POWERDIVIDERS/COMBINERS

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