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PBR价格
参考价格：￥0.4700
型号：PBR941 品牌：NXP 备注：这里有PBR多少钱，2025年最近7天走势，今日出价，今日竞价，PBR批发/采购报价，PBR行情走势销售排行榜，PBR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
UHF wideband transistor | ETC 知名厂家 | ETC |   | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
isc Silicon NPN RF Transistor DESCRIPTION ·Highgainbandwidthproduct fT=8GHz(Typ)@VCE=6V,IC=30mA,f=1GHz ·Highgain,lownoisefigure ︱S21e︱2=12dB@VCE=6V,IC=30mA,f=1GHz NF=2dB(Typ)@VCE=6V,IC=5mA,f=1GHz ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
UHF wideband transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation |  | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
MHz Band Ceramic Resonators (SMD) PBRC-G Series FEATURES •Excellentfrequencystability •Lowprofile •Reflowsolderable •Excellentsolderability(Nickelbarrier+Auflashtermination) APPLICATIONS •CarAccessories •Cam-corders •DigitalCameras •PDAs •PCPeripherals | AVX AVX Corporation | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturatio | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
HIGH ISOLATION POWER COMBINER 文件：320.14 Kbytes Page：3 Pages | MARKIMICROWAVEMarki Microwave 马基马基微波 |  | | |
HIGH ISOLATION POWER COMBINER 文件：422.84 Kbytes Page：3 Pages | MARKIMICROWAVEMarki Microwave 马基马基微波 | | | |
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HIGH ISOLATION POWER COMBINER 文件：353.53 Kbytes Page：4 Pages | MARKIMICROWAVEMarki Microwave 马基马基微波 | | | |
Transformer /Balun 文件：341.84 Kbytes Page：2 Pages | SJM SJM Prewell. All Rights Reserved. |  | | |
Transformer / 文件：272.78 Kbytes Page：2 Pages | SJM SJM Prewell. All Rights Reserved. | | | |
包装：盒 描述：AC/DC CONVERTER 12V 350W 电源 - 外部/内部（板外） AC DC 转换器 | XPP XP Power |  | | |
包装：盒 描述：AC/DC CONVERTER 12V 350W 电源 - 外部/内部（板外） AC DC 转换器 | XPP XP Power | | |
PBR产品属性
- 类型
描述
- 型号
PBR
- 制造商
CHEMICAL CONTROLS
- 功能描述
PUMP PERISTALTIC FIXED
- 制造商
CHEMICAL CONTROLS
- 功能描述
PUMP, PERISTALTIC, FIXED
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
24+ |
NA/ |
602 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NXP(恩智浦) |
24+ |
SOT23 |
300524 |
原装正品,现货库存,1小时内发货 |
|||
NXP |
24+ |
NA |
6000 |
全新原装正品现货,假一赔佰 |
|||
NXP/恩智浦 |
25+ |
SOT-23 |
54648 |
百分百原装现货 实单必成 |
|||
NXP/恩智浦 |
24+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
NXP |
24+ |
SOT-23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
实库NXP厡裝現貨 |
2041+ |
SOT23-3 |
231000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NXP/恩智浦 |
24+ |
TO-236AB-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
NXP/恩智浦 |
24+ |
TO-236AB |
504298 |
免费送样原盒原包现货一手渠道联系 |
|||
PHILIPS |
23+ |
NA |
39056 |
专做原装正品,假一罚百! |
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- PBPC606
- PBPC605
- PBPC604
- PBPC603
- PBPC602
- PBPC601
- PBPC307
- PBPC306
- PBPC305
- PBPC304
- PBPC303
- PBPC302
- PBPA19031BK2
- PBPA19021BK2
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