500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

500 V, 0.25 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability I

500 V, 0.25 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

500 V, 0.25 A PNP high-voltage low VCEsat transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 400V 0.25A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

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封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 400V 0.25A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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Audio Processor Advance Information

ACE9040 provides all the speech signal processing and data/SAT tone filtering needed for AMPS or TACS analog cellular telephones. Transmit voice channel functions comprise a microphone amplifier, soft limiter, bandpass filter, compressor, hard limiter, lowpass filter and a gain controlled amplifi

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Snap Rivets

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Snap Rivets

文件：152.09 Kbytes Page：2 Pages