Cascadable, Med. Power

The PA512 0.5 watt RF power amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage GaAs FET transistor design uses a feedback loop for flat broadband performance. An active DC biasing network insures temperatur ·High Power Output: +27.5 dBm (Typ.)\n·GaAs Fet Amplifier\n·Moderate Noise Figure: 5.2 dB (Typ.)\n·High Third OrderI.P.: +39 dBm (Typ.);

封装/外壳：TO-8 形式，4 引线 包装：卷带（TR）剪切带（CT） 描述：AMPLIFIER RF/IF，射频/中频和 RFID 射频放大器

Cascadable Amplifier 10 to 500 MHz

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Cascadable Amplifier 10 to 500 MHz

文件：153.5 Kbytes Page：2 Pages

Cascadable Amplifier

文件：374.5 Kbytes Page：2 Pages

Cascadable Amplifier

文件：374.5 Kbytes Page：2 Pages

SMT Power Inductors

文件：630.7 Kbytes Page：4 Pages

SMT Power Inductors

文件：630.7 Kbytes Page：4 Pages

SMT Power Inductors

文件：630.7 Kbytes Page：4 Pages

SMT Power Inductors

文件：725.53 Kbytes Page：6 Pages

封装/外壳：非标准 包装：卷带（TR） 描述：FIXED IND 200NH 13A 0.65MOHM SMD 电感器，线圈，扼流圈 固定电感器

Two Turn Power Bead

Two Turn Power Bead

SMT Power Inductors

文件：725.53 Kbytes Page：6 Pages

SMT Power Inductors

文件：725.53 Kbytes Page：6 Pages

Cascadable Amplifier

文件：374.5 Kbytes Page：2 Pages

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo