Instantaneous wide bandwidth

FEATURES Class AB linear GaN design Instantaneous wide bandwidth Suitable for all modulations standards Built-in protection circuits High reliability and ruggedness

Solid State High Power Amplifiers

• Class AB linear GaN design Instantaneous wide bandwidth Suitable for all modulations standards Built-in protection circuits\n• ELECTRICAL SPECIFICATIONS;

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 2400 V Mean on-state current 1270 A Surge current 19 kA

Photo Interrupter

Photo Interrupter For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elem

uP Compatible, Double-Buffered D to A Converters

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uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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