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P6SMB9.1价格
参考价格:¥0.8390
型号:P6SMB9.1A 品牌:Littelfuse 备注:这里有P6SMB9.1多少钱,2024年最近7天走势,今日出价,今日竞价,P6SMB9.1批发/采购报价,P6SMB9.1行情走势销售排行榜,P6SMB9.1报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
P6SMB9.1 | ZENEROVERVOLTAGETRANSIENTSUPPRESSORS ZenerOvervoltageTransientSuppressors TheP6SMB6.8seriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheP6SMB6.8seriesissuppliedin | MotorolaMotorola, Inc 摩托罗拉 | ||
P6SMB9.1 | SurfaceMountTransientVoltageSuppressor FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
P6SMB9.1 | Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | ||
P6SMB9.1 | SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | ||
P6SMB9.1 | SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORS 文件:335.86 Kbytes Page:5 Pages | HORNBYNantong Hornby Electronic Co.,Ltd 南通康比电子南通康比电子有限公司 | ||
P6SMB9.1 | 封装/外壳:DO-214AA,SMB 包装:卷带(TR) 描述:TVS DIODE 7.78VWM 14.07VC DO214 电路保护 TVS - 二极管 | LittelfuseLittelfuse Inc. 力特富斯(Littelfuse)力特公司 | ||
P6SMB9.1 | SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR 文件:109.71 Kbytes Page:5 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
P6SMB9.1 | 600WattsSurfaceMountTransientVoltageSuppressor 文件:630.99 Kbytes Page:4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
P6SMB9.1 | 600WattsSufaceMountTransientVoltageSuppressor 文件:133.84 Kbytes Page:4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
P6SMB9.1 | SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORPOWER 文件:146.02 Kbytes Page:5 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
P6SMB9.1 | 6.8to440Volts600WattsSMDTRANSIENTVOLTAGESUPPRESSORS 文件:104.87 Kbytes Page:5 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ||
P6SMB9.1 | SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORS 文件:99.86 Kbytes Page:3 Pages | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
P6SMB9.1 | 600W,6.8V-220VSurfaceMountTransientVoltageSuppressor 文件:192.44 Kbytes Page:6 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
SurfaceMountTransientVoltageSuppressors(TVS) Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Features ✦Forsurfacemountedapplicationsinordertooptimizeboardspace ✦Lowleakage ✦UniandBidirectionalu | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountTransientVoltageSuppressors(TVS) Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents Features ✦Forsurfacemountedapplicationsinordertooptimizeboardspace ✦Lowleakage ✦UniandBidirectionalun | SOCAYSocay Electornics Co., Ltd. 硕凯电子硕凯电子股份有限公司 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR Features ◆PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◆Lowprofilepackagewithbuilt-instrainreliefforsurfacemountedapplications ◆Glasspassivatedjunction ◆Lowincrementalsurgeresistance ◆600Wpeakpulsepowercapabilitywitha10/1000uswavefo | SHUNYEShunye Enterprise 顺烨电子江苏顺烨电子有限公司 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransientVoltageSuppressorDiodes ■Features ●PPP600W ●VBR5.0V-440V ■Applications ●ClampingVoltage | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | |||
SurfaceMountTRANSZORB®TransientVoltageSuppressors SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
TransientVoltageSuppressors Features 1.Halogen-free 2.Rohscompliant 3.Typicalmaximumtemperaturecoefficient 4.ΔVBR=0.1xVBR@25°CxΔT 5.GlasspassivatedChipjunctioninDO-214AApackage 6.600Wpeakpulsecapadilityat10×1000μswaveform,repetitionrate(dutycycles):0.01 7.Fastresponsetime:typicallyle | RUILONRUILONGYUAN ELECTRONICS 瑞隆源深圳市瑞隆源电子有限公司 | |||
SurfaceMountTransientVoltageSuppressors Features •Lowprofilepackagewithbuilt-instrainreliefforsurfacemountedapplications •PlasticpackagehasULflammabilityclassification94V-0 •Very-fastresponsetime •Excellentclampingcapability •Lowincrementalsurgeresistance •Glasspassivatedjunction •Hightemperature | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | |||
SurfaceMountTRANSZORBTransientVoltageSuppressors SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR FEATURES ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O ●TypicalIRlessthan1μAabove10V ●FastResponseTime:typicallylessthan1.0nsfrom0vtoV | DIOTECH Diotech Company. | |||
SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha 10/1000μswaveform,repetitiverate(duty cycle):0.01 •Excellentclampingcapability •Ver | VishayVishay Siliconix 威世科技威世科技半导体 | |||
TransientVoltageSuppressionDiodes Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Applications TVSdevicesareidealfortheprotectionofI/OInterfaces,VCCbusandothervulnerablecirc | LittelfuseLittelfuse Inc. 力特富斯(Littelfuse)力特公司 | |||
SurfaceMountTransientVoltageSuppressors Features PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 Lowprofilepackagewithbuilt-instrainreliefforsurfacemountedapplications Glasspassivatedjunction Lowincrementalsurgeresistance 600Wpeakpulsepowercapabilitywitha10/1 | Good-Ark Good-Ark | |||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan | MDEMDE semiconductor MDE半导体公司 | |||
600WSurfaceMountTransientVoltageSuppressor 600WSurfaceMountTransientVoltageSuppressor Features ●Breakdownvoltagefrom6.8to250volts ●Lowinductance,excellentclampingcapability ●Repetitionrate(dutycycle):0.01 ●Fastresponsetime:typicallylessthan1.0psfrom0vtoVBR ●Forunidirectionaltypes ●TypicalIRless | TAITRON TAITRON | |||
600WSurfaceMountTransientVoltageSuppressors 600WSurfaceMountTransientVoltageSuppressors Feature: *600WattPeakPowerDissipation *GlassPassivatedDieConstruction *ExcellentClampingCapabilityFastResponseTime *PlasticMaterialHasULFlammabilityClassificationRating94V-O MechanicalData *Case: | WEITRONWEITRON 威堂電子科技 | |||
UNI-DIRECTIONALGLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR600WATTS,6.8THRU200VOLTS DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI | CentralCentral Semiconductor Corp 美国中央半导体 | |||
ZENEROVERVOLTAGETRANSIENTSUPPRESSORS ZenerOvervoltageTransientSuppressors TheP6SMB6.8seriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheP6SMB6.8seriesissuppliedin | MotorolaMotorola, Inc 摩托罗拉 | |||
SurfaceMountTransientVoltageSuppressor FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
TRANSIENTVOLTAGESUPPRESSOR600WSURFACEMOUNT DESCRIPTION TheP6SMBisavailableinSMBpackage MECHANICALDATA Case:SMB Terminals:SolderableperMIL STD750, Method2026 Approx.Weight:0.055g/0.002oz FEATURES ⚫Forsurfacemountedapplicationsinorderto optimizeboardspace. ⚫Lowprofilepackage ⚫Glasspassivated | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | |||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | |||
TransientVoltageSuppressors FEATURES ◇Forsurfacemountedapplicationsinordertooptimizeboardspace. ◇Lowprofilepackage. ◇Built-instrainrelief. ◇Glasspassivatedjunction. ◇Lowinductance. ◇Excellentclampingcapability. ◇RepetitionRate(dutycycle):0.01. ◇Fastresponsetime:typicallylessthan1.0 | MERITEKMERITEK electronics corporation MERITEK电子MERITEK电子公司 | |||
6.8-550VoltsPeakpulsepower:600Watts Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. APPLICATIONS TVSdevicesareidealfortheprotectionofI/OInterfaces,busandothervulnerablecircuitsusedin | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | |||
SILICONTRANSIENTVOLTAGESUPPRESSOR DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | |||
TransientVoltageSuppressors GlassPassivatedJunctionTransientVoltageSuppressor VOLTAGE-6.8TO550Volts 400WattPeakPulsePower Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lo | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
TransientVoltageSuppressors Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan1.0psfrom0v | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SurfaceMountTransientVoltageSuppressor FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
600WattPeakPowerZenerTransientVoltageSuppressors TheSMBseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMBseriesissuppliedinONSemiconductor’sexclusive,cost-effective,high | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
600WattPeakPowerZenerTransientVoltageSuppressors TheSMBseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMBseriesissuppliedinONSemiconductor’sexclusive,cost-effective,high | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
600WattPeakPowerZenerTransientVoltageSuppressors TheSMBseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMBseriesissuppliedinONSemiconductor’sexclusive,cost-effective,high | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SurfaceMountTransientVoltageSuppressor FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
BI-DIRECTIONALGLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR600WATTS,6.8THRU200VOLTS DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI | CentralCentral Semiconductor Corp 美国中央半导体 | |||
600WSurfaceMountTransientVoltageSuppressors 600WSurfaceMountTransientVoltageSuppressors Feature: *600WattPeakPowerDissipation *GlassPassivatedDieConstruction *ExcellentClampingCapabilityFastResponseTime *PlasticMaterialHasULFlammabilityClassificationRating94V-O MechanicalData *Case: | WEITRONWEITRON 威堂電子科技 | |||
SurfaceMountTransientVoltageSuppressor FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan | MDEMDE semiconductor MDE半导体公司 | |||
TransientVoltageSuppressionDiodes Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Applications TVSdevicesareidealfortheprotectionofI/OInterfaces,VCCbusandothervulnerablecirc | LittelfuseLittelfuse Inc. 力特富斯(Littelfuse)力特公司 | |||
600WSurfaceMountTransientVoltageSuppressor 600WSurfaceMountTransientVoltageSuppressor Features ●Breakdownvoltagefrom6.8to250volts ●Lowinductance,excellentclampingcapability ●Repetitionrate(dutycycle):0.01 ●Fastresponsetime:typicallylessthan1.0psfrom0vtoVBR ●Forunidirectionaltypes ●TypicalIRless | TAITRON TAITRON | |||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | |||
Excellentclampingcapability Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD | SEMITECHShanghai Semitech Semiconductor Co., Ltd 海晨启半导体上海晨启半导体有限公司 | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
TransientVoltageSuppressors Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan1.0psfrom0v | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SurfaceMountTransientVoltageSuppressors(TVS) Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Features ✦Forsurfacemountedapplicationsinordertooptimizeboardspace ✦Lowleakage ✦UniandBidirectionalu | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 |
P6SMB9.1产品属性
- 类型
描述
- 型号
P6SMB9.1
- 功能描述
TVS 二极管 - 瞬态电压抑制器 TVS SURF MT DO214AA
- RoHS
否
- 制造商
Vishay Semiconductors
- 极性
Bidirectional
- 击穿电压
58.9 V
- 钳位电压
77.4 V
- 峰值浪涌电流
38.8 A
- 封装/箱体
DO-214AB
- 最小工作温度
- 55 C
- 最大工作温度
+ 150 C
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
18+ |
DO214AA(SMB) |
66530 |
全新原装现货/假一罚百! |
||||
VISHAY/威世 |
24+ |
DO-214AA |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
LITTELFUSE/力特 |
DO-214AA |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
BOURNS |
23+ |
SMB(DO214AA) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ON/安森美 |
23+ |
NA/ |
10050 |
原厂直销,现货供应,账期支持! |
|||
LITTELFUSE/力特 |
2320+ |
DO-214AA |
562000 |
16年只做原装原标渠道现货终端BOM表可配单提供样品 |
|||
VISHAY/威世 |
22+ |
DO-214AA(SMB) |
354000 |
||||
TSC |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
||||
VishayLittelfuse |
08+ |
DO-214AA(SMB) |
55000 |
||||
TLC(竞沃) |
23+ |
NA |
200 |
瞬态抑制二极管 |
P6SMB9.1规格书下载地址
P6SMB9.1参数引脚图相关
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- pcb设计
- pcb软件
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- PCBA
- pc817
- pc133
- pc100
- PC/104
- p800
- P70530
- P703-MT
- P70360
- P7010
- P700001
- P700000
- P6V8FB3
- P6V8FB2
- P6V8FB1
- P6V8B
- P6V2FB3
- P6V2FB2
- P6V2FB1
- P6V2B
- P6SMB-Q
- P6SMBJ160CA-F
- P6SMBJ150CA_R2_00001
- P6SMBJ14AT/R
- P6SMBJ14A_R2_00001
- P6SMBJ13A
- P6SMBJ130A-PK
- P6SMBJ130AGI-PK-TR
- P6SMBJ12CA
- P6SMBJ120A_R2_00001
- P6SMBJ100A-NZ
- P6SMBJ
- P6SMBF
- P6SMB-E
- P6SMB9A
- P6SMB91CA-E3/52
- P6SMB91CA
- P6SMB91AT3G
- P6SMB91AT3
- P6SMB91A-E3/52
- P6SMB91A
- P6SMB91
- P6SMB9.1CA-E3/52
- P6SMB9.1CA
- P6SMB9.1C
- P6SMB9.1A
- P6SMB9
- P6SMB8A
- P6SMB82CAT3G
- P6SMB82CA-E3/52
- P6SMB82CA
- P6SMB82AT3G
- P6SMB82A
- P6SMB82
- P6SMB8.2CA-E3/52
- P6SMB8.2CA
- P6SMB8.2C
- P6SMB8.2AT3G
- P6SMB8.2A
- P6SMB8
- P6SMB7A
- P6SMB75CA-E3/52
- P6SMB75CA
- P6SMB75C
- P6SMB75AT3G
- P6SMB75AT3
- P6SMB75A-E3/52
- P6SMB75A
- P6SMB75
- P6SMB7.5CA-E3/52
- P6SMB7
- P6SMB6A
- P6SMB68
- P6SMB62
- P6SMB6
- P6SMB56
- P6SMB51
- P6SMB47
- P6SMB43
- P6SMB39
- P6SMB36
- P6SMB33
- P6SMB31
- P6SMB30
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製造商:Littelfuse 產品類型:ESD抑制器/TVS二晶體 RoHS:詳細資料 產品類型:TVSDiodes 極性:Bidirectional 操作電壓:12.8V 終端類型:SMD/SMT 封裝/外殼:DO-214AA-2 擊穿電壓:15.8V 鉗位電壓:21.2V Pppm-峰值脈衝功率消耗:600W Vesd-電壓靜電放電觸點:- Vesd-電壓靜電放電空
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可立即发货
2019-9-24
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
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- P39
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- P43
- P44
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- P51
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- P75
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- P77
- P78
- P79
- P80