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位置：首页 > IC中文资料第3666页 > P6SMB8.2

P6SMB8.2价格

参考价格：￥0.8390

型号：P6SMB8.2A 品牌：Littelfuse 备注：这里有P6SMB8.2多少钱，2024年最近7天走势，今日出价，今日竞价，P6SMB8.2批发/采购报价，P6SMB8.2行情走势销售排行榜，P6SMB8.2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
P6SMB8.2

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2

ZENEROVERVOLTAGETRANSIENTSUPPRESSORS

ZenerOvervoltageTransientSuppressors TheP6SMB6.8seriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheP6SMB6.8seriesissuppliedin

MotorolaMotorola, Inc

摩托罗拉

Motorola
P6SMB8.2

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
P6SMB8.2

Excellentclampingcapability

Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨启半导体上海晨启半导体有限公司

SEMITECH
P6SMB8.2

6.8to440Volts600WattsSMDTRANSIENTVOLTAGESUPPRESSORS

文件：104.87 Kbytes Page：5 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
P6SMB8.2

600WattsSurfaceMountTransientVoltageSuppressor

文件：630.99 Kbytes Page：4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

文件：109.71 Kbytes Page：5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
P6SMB8.2

600WattsSufaceMountTransientVoltageSuppressor

文件：133.84 Kbytes Page：4 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2

600W,6.8V-220VSurfaceMountTransientVoltageSuppressor

文件：192.44 Kbytes Page：6 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORPOWER

文件：146.02 Kbytes Page：5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
P6SMB8.2

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORS

文件：99.86 Kbytes Page：3 Pages

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
P6SMB8.2

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORS

文件：335.86 Kbytes Page：5 Pages

HORNBYNantong Hornby Electronic Co.,Ltd

南通康比电子南通康比电子有限公司

HORNBY
P6SMB8.2

封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：TVS DIODE 7.02VWM 12.71VC DO214 电路保护 TVS - 二极管

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse
P6SMB8.2A

SurfaceMountTRANSZORBTransientVoltageSuppressors

SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera

VishayVishay Siliconix

威世科技

Vishay
P6SMB8.2A

SILICONTRANSIENTVOLTAGESUPPRESSOR

DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI

CentralCentral Semiconductor Corp

美国中央半导体

Central
P6SMB8.2A

SurfaceMountTransientVoltageSuppressors(TVS)

Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents Features ✦Forsurfacemountedapplicationsinordertooptimizeboardspace ✦Lowleakage ✦UniandBidirectionalun

SOCAYSocay Electornics Co., Ltd.

硕凯电子硕凯电子股份有限公司

SOCAY
P6SMB8.2A

Excellentclampingcapability

Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨启半导体上海晨启半导体有限公司

SEMITECH
P6SMB8.2A

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
P6SMB8.2A

6.8-550VoltsPeakpulsepower:600Watts

Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. APPLICATIONS TVSdevicesareidealfortheprotectionofI/OInterfaces,busandothervulnerablecircuitsusedin

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

CHENDA
P6SMB8.2A

SurfaceMountTRANSZORB®TransientVoltageSuppressors

SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera

VishayVishay Siliconix

威世科技

Vishay
P6SMB8.2A

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

FEATURES ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O ●TypicalIRlessthan1μAabove10V ●FastResponseTime:typicallylessthan1.0nsfrom0vtoV

DIOTECH

Diotech Company.

DIOTECH
P6SMB8.2A

TransientVoltageSuppressionDiodes

Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Applications TVSdevicesareidealfortheprotectionofI/OInterfaces,VCCbusandothervulnerablecirc

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse
P6SMB8.2A

SurfaceMountTRANSZORB®TransientVoltageSuppressors

FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha   10/1000μswaveform,repetitiverate(duty   cycle):0.01 •Excellentclampingcapability •Ver

VishayVishay Siliconix

威世科技

Vishay
P6SMB8.2A

600WSurfaceMountTransientVoltageSuppressor

600WSurfaceMountTransientVoltageSuppressor Features ●Breakdownvoltagefrom6.8to250volts ●Lowinductance,excellentclampingcapability ●Repetitionrate(dutycycle):0.01 ●Fastresponsetime:typicallylessthan1.0psfrom0vtoVBR ●Forunidirectionaltypes ●TypicalIRless

TAITRON

TAITRON

TAITRON
P6SMB8.2A

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan

MDEMDE semiconductor

MDE半导体公司

MDE
P6SMB8.2A

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2A

600WSurfaceMountTransientVoltageSuppressors

600WSurfaceMountTransientVoltageSuppressors Feature: *600WattPeakPowerDissipation *GlassPassivatedDieConstruction *ExcellentClampingCapabilityFastResponseTime *PlasticMaterialHasULFlammabilityClassificationRating94V-O MechanicalData *Case:

WEITRONWEITRON

威堂電子科技

WEITRON
P6SMB8.2A

UNI-DIRECTIONALGLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR600WATTS,6.8THRU200VOLTS

DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI

CentralCentral Semiconductor Corp

美国中央半导体

Central
P6SMB8.2A

ZENEROVERVOLTAGETRANSIENTSUPPRESSORS

ZenerOvervoltageTransientSuppressors TheP6SMB6.8seriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheP6SMB6.8seriesissuppliedin

MotorolaMotorola, Inc

摩托罗拉

Motorola
P6SMB8.2A

TransientVoltageSuppressors

Features 1.Halogen-free 2.Rohscompliant 3.Typicalmaximumtemperaturecoefficient 4.ΔVBR=0.1xVBR@25°CxΔT 5.GlasspassivatedChipjunctioninDO-214AApackage 6.600Wpeakpulsecapadilityat10×1000μswaveform,repetitionrate(dutycycles):0.01 7.Fastresponsetime:typicallyle

RUILONRUILONGYUAN ELECTRONICS

瑞隆源深圳市瑞隆源电子有限公司

RUILON
P6SMB8.2A

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
P6SMB8.2A

Excellentclampingcapability

Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨启半导体上海晨启半导体有限公司

SEMITECH
P6SMB8.2A

TransientVoltageSuppressorDiodes

■Features ●PPP600W ●VBR5.0V-440V ■Applications ●ClampingVoltage

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
P6SMB8.2A

SurfaceMountTransientVoltageSuppressors

Features •Lowprofilepackagewithbuilt-instrainreliefforsurfacemountedapplications •PlasticpackagehasULflammabilityclassification94V-0 •Very-fastresponsetime •Excellentclampingcapability •Lowincrementalsurgeresistance •Glasspassivatedjunction •Hightemperature

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC
P6SMB8.2A

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

Features ◆PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◆Lowprofilepackagewithbuilt-instrainreliefforsurfacemountedapplications ◆Glasspassivatedjunction ◆Lowincrementalsurgeresistance ◆600Wpeakpulsepowercapabilitywitha10/1000uswavefo

SHUNYEShunye Enterprise

顺烨电子江苏顺烨电子有限公司

SHUNYE
P6SMB8.2A

SurfaceMountTransientVoltageSuppressors

Features ‹PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ‹Lowprofilepackagewithbuilt-instrainreliefforsurfacemountedapplications ‹Glasspassivatedjunction ‹Lowincrementalsurgeresistance ‹600Wpeakpulsepowercapabilitywitha10/1

Good-Ark

Good-Ark

Good-Ark
P6SMB8.2A

SurfaceMountTransientVoltageSuppressors(TVS)

Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Features ✦Forsurfacemountedapplicationsinordertooptimizeboardspace ✦Lowleakage ✦UniandBidirectionalu

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI
P6SMB8.2A

TransientVoltageSuppressors

FEATURES ◇Forsurfacemountedapplicationsinordertooptimizeboardspace. ◇Lowprofilepackage. ◇Built-instrainrelief. ◇Glasspassivatedjunction. ◇Lowinductance. ◇Excellentclampingcapability. ◇RepetitionRate(dutycycle):0.01. ◇Fastresponsetime:typicallylessthan1.0

MERITEKMERITEK electronics corporation

MERITEK电子MERITEK电子公司

MERITEK
P6SMB8.2A

TransientVoltageSuppressors

Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan1.0psfrom0v

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
P6SMB8.2A

TransientVoltageSuppressors

GlassPassivatedJunctionTransientVoltageSuppressor VOLTAGE-6.8TO550Volts 400WattPeakPulsePower Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lo

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
P6SMB8.2A

SurfaceMountTRANSZORBTransientVoltageSuppressors

SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera

VishayVishay Siliconix

威世科技

Vishay
P6SMB8.2A

SurfaceMountTRANSZORBTransientVoltageSuppressors

SurfaceMountTRANSZORB®TransientVoltageSuppressors FEATURES •Lowprofilepackage •Idealforautomatedplacement •Glasspassivatedchipjunction •Availableinuni-directionalandbi-directional •600Wpeakpulsepowercapabilitywitha10/1000µswaveform,repetitivera

VishayVishay Siliconix

威世科技

Vishay
P6SMB8.2AC

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2ACA

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2AT3

600WattPeakPowerZenerTransientVoltageSuppressors

TheSMBseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMBseriesissuppliedinONSemiconductor’sexclusive,cost-effective,high

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
P6SMB8.2AT3G

600WattPeakPowerZenerTransientVoltageSuppressors

TheSMBseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMBseriesissuppliedinONSemiconductor’sexclusive,cost-effective,high

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
P6SMB8.2AT3G

600WattPeakPowerZenerTransientVoltageSuppressors

TheSMBseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMBseriesissuppliedinONSemiconductor’sexclusive,cost-effective,high

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
P6SMB8.2C

Excellentclampingcapability

Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨启半导体上海晨启半导体有限公司

SEMITECH
P6SMB8.2C

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
P6SMB8.2C

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2CA

SurfaceMountTransientVoltageSuppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
P6SMB8.2CA

BI-DIRECTIONALGLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR600WATTS,6.8THRU200VOLTS

DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI

CentralCentral Semiconductor Corp

美国中央半导体

Central
P6SMB8.2CA

600WSurfaceMountTransientVoltageSuppressors

600WSurfaceMountTransientVoltageSuppressors Feature: *600WattPeakPowerDissipation *GlassPassivatedDieConstruction *ExcellentClampingCapabilityFastResponseTime *PlasticMaterialHasULFlammabilityClassificationRating94V-O MechanicalData *Case:

WEITRONWEITRON

威堂電子科技

WEITRON
P6SMB8.2CA

GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan

MDEMDE semiconductor

MDE半导体公司

MDE
P6SMB8.2CA

TransientVoltageSuppressionDiodes

Description TheP6SMBseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents. Applications TVSdevicesareidealfortheprotectionofI/OInterfaces,VCCbusandothervulnerablecirc

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse
P6SMB8.2CA

SILICONTRANSIENTVOLTAGESUPPRESSOR

DESCRIPTION TheCENTRALSEMICONDUCTORP6SMB6.8ASeriestypesareSurfaceMountUni-DirectionalGlassPassivatedJunctionTransientVoltageSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighvoltagetransients.THISDEVICEISMANUFACTUREDWITHAGLASSPASSIVATEDCHIPFOROPTI

CentralCentral Semiconductor Corp

美国中央半导体

Central
P6SMB8.2CA

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
P6SMB8.2CA

Excellentclampingcapability

Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨启半导体上海晨启半导体有限公司

SEMITECH
P6SMB8.2CA

Excellentclampingcapability

Features ●Peakpowerdissipation600W@10x1000usPulse ●Lowprofilepackage. ●Excellentclampingcapability. ●Glasspassivatedjunction. ●Fastresponsetime:typicallylessthan1psfrom0VoltstoBVmin ●TypicalIRlessthan1uAwhenVBRminabove12V. ●IEC61000-4-2ESD

SEMITECHShanghai Semitech Semiconductor Co., Ltd

海晨启半导体上海晨启半导体有限公司

SEMITECH
P6SMB8.2CA

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

P6SMB8.2产品属性

  • 类型

    描述

  • 型号

    P6SMB8.2

  • 功能描述

    TVS 二极管 - 瞬态电压抑制器 TVS SURF MT DO214AA

  • RoHS

    否

  • 制造商

    Vishay Semiconductors

  • 极性

    Bidirectional

  • 击穿电压

    58.9 V

  • 钳位电压

    77.4 V

  • 峰值浪涌电流

    38.8 A

  • 封装/箱体

    DO-214AB

  • 最小工作温度

    - 55 C

  • 最大工作温度

    + 150 C

P6SMB8.2供应商更多...

更新时间：2024-5-21 22:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
P6SMB8.2AT3G
ON/安森美
24+
SMB
45000
热卖优势现货
询价
深圳市得捷芯城科技有限公司
P6SMB8.2CA
VISHAY/威世
23+
NA/
15000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市弘扬芯城科技有限公司
P6SMB8.2CA-E3/52
VISHAY(威世)
23+
DO214AA(SMB)
6000
询价
深圳市高捷芯城科技有限公司
P6SMB8.2CA
BOURNS
23+
SMB(DO214AA)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市诚利顺电子科技有限公司
P6SMB8.2A
VISHAY
23+
SMB
120000
十七年VIP会员,诚信经营，一手货源，原装正品可零售！
询价
深圳市威雅利发展有限公司
P6SMB8.2CA
littelfuse
09+
DO-214A
3813
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市大联智电子有限公司
P6SMB8.2CAHE3/52
VISHAY/威世
22+
DO-214AA(SMB)
354000
询价
深圳廊盛科技有限公司
P6SMB8.2CA
VISHAY/威世
2022
DO-214A
80000
原装现货,OEM渠道,欢迎咨询
询价
深圳市特莱科技有限公司
P6SMB8.2A
VISHAY/威世
22+21+
DO-214A
15000
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
深圳市科恒伟业电子有限公司
P6SMB8.2AT3G
ON
2016+
PBFREE
5632
只做进口原装正品!现货或者订货一周货期!只要要网上有
询价

P6SMB8.2芯片相关品牌

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